1 transistor 2sA1034, 2sa1035 silicon pnp epitaxial planer type for low-frequency and low-noise amplification complementary to 2sc2405 and 2sc2406 n features l low noise voltage nv. l high foward current transfer ratio h fe . l mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C35 C55 C35 C55 C5 C100 C50 200 150 C55 ~ +150 unit v v v ma ma mw ?c ?c 2sA1034 2sa1035 2sA1034 2sa1035 n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter voltage transition frequency noise voltage symbol i cbo i ceo v cbo v ceo v ebo h fe *1 v ce(sat) v be f t nv conditions v cb = C10v, i e = 0 v ce = C10v, i b = 0 i c = C10 m a, i e = 0 i c = C2ma, i b = 0 i e = C10 m a, i c = 0 v ce = C5v, i c = C2ma i c = C100ma, i b = C10ma *2 v ce = C1v, i c = C100ma *2 v cb = C5v, i e = 2ma, f = 200mhz v ce = C10v, i c = C1ma, g v = 80db r g = 100k w , function = flat min C35 C55 C35 C55 C5 180 typ C 0.7 200 max C100 C1 700 C 0.6 C1.0 150 unit na m a v v v v v mhz mv * h fe1 rank classification rank r s t h fe 180 ~ 360 260 ~ 520 360 ~ 700 2sA1034 fr fs ft 2sa1035 hr hs ht marking symbol : f (2sA1034) h (2sa1035) unit: mm 1:base jedec:toC236 2:emitter eiaj:scC59 3:collector mini type package 2.8 +0.2 ?.3 1.5 +0.25 ?.05 0.65 0.15 0.65 0.15 3 1 2 0.95 0.95 1.9 0.2 0.4 +0.1 ?.05 1.1 +0.2 ?.1 0.8 0.4 0.2 0 to 0.1 0.16 +0.1 ?.06 1.45 0.1 to 0.3 2.9 +0.2 ?.05 *2 pulse measurement marking symbol 2sA1034 2sa1035 2sA1034 2sa1035
2 transistor 2sA1034, 2sa1035 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 0 ?2 ?0 ? ? ? ? 0 ?60 ?20 ?0 ?00 ?40 ?0 ?0 ?0 ta=25?c i b =?50 m a ?00 m a ?50 m a ?00 m a ?50 m a ?00 m a ?0 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 0.5 ?0.4 ?0.1 0.3 ?0.2 0 ?60 ?20 ?0 ?00 ?40 ?0 ?0 ?0 v ce =?v ta=25?c base current i b ( ma ) collector current i c ( ma ) 0 ?.0 ?0.8 ?0.2 0.6 ?0.4 0 ?00 ?00 ?00 ?00 ?00 ?00 ?00 ?00 v ce =?v ta=25?c base to emitter voltage v be ( v ) base current i b ( m a ) 0 ?.0 ?.6 ?0.4 ?.2 ?0.8 0 ?20 ?00 ?0 ?0 ?0 ?0 v ce =?v ta=75?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) ?.1 1 ?0 ?00 ?.3 3 ?0 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 ta=75?c 25?c ?5?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 0 600 500 400 300 200 100 v ce =?v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 0 500 400 300 200 100 450 350 250 150 50 v cb =?v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 0 20 16 12 8 4 18 14 10 6 2 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) p c ta i c v ce i c i b i b v be i c v be v ce(sat) i c h fe i c f t i e c ob v cb
3 transistor 2sA1034, 2sa1035 ? ? ?0 ?0 ?00 0 160 120 40 100 140 80 20 60 i c =?ma g v =80db function=flat 4.7k w r g =100k w 22k w collector to emitter voltage v ce ( v ) noise voltage nv ( mv ) ?0.01 ?0.03 ?0.1 0.3 1 0 160 120 40 100 140 80 20 60 v ce =?0v g v =80db function=flat 4.7k w r g =100k w 22k w collector current i c ( ma ) noise voltage nv ( mv ) ?0.01 ?0.03 ?0.1 0.3 1 0 300 240 120 180 60 v ce =?0v g v =80db function=riaa 4.7k w r g =100k w 22k w collector current i c ( ma ) noise voltage nv ( mv ) 1 3 10 30 100 0 160 120 40 100 140 80 20 60 v ce =?0v g v =80db function=flat ?0.1ma i c =?ma ?0.5ma signal source resistance r g ( k w ) noise voltage nv ( mv ) 1 3 10 30 100 0 300 240 120 180 60 ?0.1ma i c =?ma ?0.5ma v ce =?0v g v =80db function=riaa signal source resistance r g ( k w ) noise voltage nv ( mv ) ? ? ?0 ?0 ?00 0 300 240 120 180 60 i c =?ma g v =80db function=riaa 4.7k w r g =100k w 22k w collector to emitter voltage v ce ( v ) noise voltage nv ( mv ) nv v ce nv v ce nv i c nv i c nv r g nv r g
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